Design of Ultra-low Leakage Power Sequential Circuits

نویسندگان

  • P. Srikanth
  • R. Ramana Reddy
چکیده

Reduction in leakage power has become an important concern in low-voltage, low-power, and highperformance applications. International Technology Roadmap for Semiconductors projects that leakage power consumption may come to dominate total chip power consumption as the technology feature size shrinks. A novel approach for ultra-low leakage CMOS circuit structure is “Sleepy keeper.” Sleepy keeper uses traditional sleep transistors plus two additional transistors – driven by a gate’s already calculated output – to save state during sleep mode. Dual Vth values can be applied to sleepy keeper in order to dramatically reduce sub-threshold leakage current. Unlike many other previous approaches, sleepy keeper can retain logic state during sleep mode while achieving ultra-low leakage power consumption. For applications spending the vast majority of time in sleep or standby mode, requires low area, high performance and maintenance of exact logic state, the sleepy keeper approach provides a new weapon.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Reducing Glitching and Leakage Power in Low Voltage Cmos Circuits

The need for low power dissipation in portable computing and wireless communication is making design communities accept ultra low voltage CMOS processes. With the lowering of' supply voltage, the transistor thresholds (Vth) have to be scaled down to meet the performance requirements. However, such scaling can increase the leakage current through a transistor, thereby increasing the leakage powe...

متن کامل

Reduction of Leakage Power using Stacking Power Gating Technique in Different CMOS Design Style at 45Nanometer Regime

As transistor sizes scale down and levels of integration increase, leakage power has become a vital downside in modern low-power VLSI technology. This is often very true for ultra-lowvoltage (ULV) circuits, wherever high levels of leakage force designers to selected relatively high threshold voltages, which limits performance. In this paper, we design different design approach of master slave D...

متن کامل

Design of a Low Power Magnetic Memory in the Presence of Process Variations

With the advancement in technology and shrinkage of transistor sizes, especially in technologies below 90 nm, one of the biggest problems of the conventional CMOS circuits is the high static power consumption due to increased leakage current. Spintronic devices, like magnetic tunnel junction (MTJ), thanks to their low power consumption, non-volatility, compatibility with CMOS transistors, and t...

متن کامل

An Efficient Design Approach for Low Leakage with NBTI Aware Analysis

As the technology scales down the leakage current in the circuit increases due to reduction in threshold voltage and Negative Bias Temperature Instability (NBTI) producing aging effect in the circuit. Leakage current and NBTI strongly depends on Input Vector Control Technique (IVC) , but IVC is not effective for larger circuits. Therefore in this paper two new designs (1)Ultra low power diode b...

متن کامل

Study of Ultra Low Power Design and Power Reduction Techniques for VLSI Circuits at Ultra Low Voltages

The advancements and scaling in technology are continuously increasing in accordance with Moore’s Law. This results in an increase in the performance of chips, but comes with a price due to the increased power consumption, and hence resources are spent on cooling, packaging and other methods to reduce the after effects. This additional cost has to be eliminated, and the most obvious solution is...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2012